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| NTE89 Silicon NPN Transistor Color TV Horizontal Output w/Internal Damper Diode Features: D Color TV Horizontal Output Applications D High Voltage: VCBO = 1500V D Low Saturation Voltage: VCE(sat) = 5V Max (IC = 5A, IB = 1A) D High Speed: tf = 1.0s Max D Built-In Damper Diode D Glass Passivated Collector-Base Junction Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -6A Collector Power Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Forward Voltage (Damper Diode) Transition Frequency Collector Output Capacitance Fall Time Symbol ICBO hFE VBE(sat) -VF fT Cob tf Test Conditions VCB = 500V, IE = 0 VCE = 5V, IC = 1A IC = 5A, IB = 1A IF = 6A VCE = 10V, IC = 100mA VCB = 10V, IE = 0, f = 1MHz ICP = 5A, IB1(end) = 1A Min - 5 8 - - - - - - Typ - - 12 3 - 1.6 3 165 0.5 Max 10 - - 5 1.5 2.0 - - 1.0 V V V MHz pF s Unit A V V(BR)EBO IE = 200mA, IC = 0 VCE(sat) IC = 5A, IB = 1A COLLECTOR BASE EMITTER .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .215 (5.45) .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case |
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